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PD-96914
RADIATION HARDENED POWER MOSFET RAD Hard HEXFET SURFACE MOUNT (TO-254AA Tabless)
TM
IRHMJ7250 200V, N-CHANNEL
(R)
TECHNOLOGY
Product Summary
Part Number Radiation Level IRHMJ7250 100K Rads (Si) IRHMJ3250 300K Rads (Si) IRHMJ4250 IRHMJ8250 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.10 0.10 0.10 0.10 ID 26A 26A 26A 26A
TO-254AA Tabless
International Rectifier's RADHard HEXFET(R) technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 26 16 104 150 1.2 20 500 26 15 5.0 -55 to 150 300 (for 5s) 8.0 (Typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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IRHMJ7250
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
200 -- -- -- 2.0 8.0 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.27 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.10 0.11 4.0 -- 25 250 100 -100 170 30 60 33 140 140 140 -- V V/C V S( ) A
Test Conditions
VGS =0 V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 16A VGS = 12V, ID = 26A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 16A VDS= 160V,VGS=0V VDS = 160V VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID = 26A VDS = 100V VDD = 100V, ID = 26A, VGS = 12V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
4700 850 210
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 26 104 1.4 820 12
Test Conditions
A
V nS C Tj = 25C, IS = 26A, VGS = 0V A Tj = 25C, IF = 26A, di/dt 100A/s VDD 25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-sink Junction-to-Ambient
Min Typ Max
-- -- -- -- 0.83 0.21 -- -- 48
Units
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier website. For footnotes refer to the last page
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Pre-Irradiation Radiation Characteristics
IRHMJ7250
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage A Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source A On-State Resistance (TO-254AA) Diode Forward Voltage A
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS =160V, VGS =0V VGS = 12V, ID =16A VGS = 12V, ID =16A VGS = 0V, IS = 26A
Min 200 2.0 -- -- -- -- -- --
Max -- 4.0 100 -100 25 0.094 0.10 1.4
Min 200 1.25 -- -- -- -- -- --
Max -- 4.5 100 -100 50 0.149 0.155 1.4 V nA A V
1. Part numbers IRHMJ7250, IRHMJ3250 and IRHMJ4250 2. Part number IRHMJ8250
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Cu Br LET MeV/(mg/cm2)) 28 36.8 Energy (MeV) 285 305 Range VDS(V) (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 43 190 180 170 125 -- 39 100 100 100 50 --
200 150 100 50 0 0 -5 -10 VGS -15 -20 Cu Br VDS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHMJ7250
Post-Irradiation Pre-Irradiation
Fig 1. Typical Response of Gate Threshhold Voltage Vs. Total Dose Exposure
Fig 2. Typical Response of On-State Resistance Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance Vs. Total Dose Exposure
Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose Exposure
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Pre-Irradiation Post-Irradiation
IRHMJ7250
Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs. Neutron Fluence Level
Fig 8a. Gate Stress of VGSS Equals 12 Volts During Radiation
Fig 7. Typical Transient Response of Rad Hard HEXFET During 1x1012 Rad (Si)/Sec Exposure
Fig 8b. VDSS Stress Equals 80% of BVDSS During Radiation
Fig 9. High Dose Rate (Gamma Dot) Test Circuit
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IRHMJ7250
Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc
RadiationPost-Irradiation Characteristics Pre-Irradiation
Fig 10. Typical Output Characteristics Pre-Irradiation
Fig 11. Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Fig 12. Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Fig 13. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si)
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Pre-Irradiation Radiation Characteristics
Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 160 Vdc
IRHMJ7250
Fig 14. Typical Output Characteristics Pre-Irradiation
Fig 15. Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Fig 16. Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Fig 17. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si)
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IRHMJ7250
Pre-Irradiation
Fig 18. Typical Output Characteristics
Fig 19. Typical Output Characteristics
Fig 20. Typical Transfer Characteristics
Fig 21. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHMJ7250
Fig 22. Typical CapacitanceVs. Drain-to-Source Voltage
Fig 23. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 24. Typical Source-Drain Diode Forward Voltage
Fig 25. Maximum Safe Operating Area
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IRHMJ7250
Pre-Irradiation
V DS V GS RG VGS
Pulse Width 1 s Duty Factor 0.1 %
RD
D.U.T.
+
-V DD
Fig 26a. Switching Time Test Circuit
VDS 90%
Fig 26. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 26b. Switching Time Waveforms
Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHMJ7250
15V
VDS
L
DRIVER
RG
D.U.T.
IAS tp
+ - VDD
A
VGS 20V
0.01
Fig 28a. Unclamped Inductive Test Circuit
V(BR)DSS tp
Fig 28c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 28b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
VG
Charge
IG
ID
Current Sampling Resistors
Fig 29a. Basic Gate Charge Waveform
Fig 29b. Gate Charge Test Circuit
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IRHMJ7250
Pre-Irradiation
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. A Total Dose Irradiation with VDS Bias.
Foot Notes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 25V, starting TJ = 25C, L= 1.5mH Peak IL = 26A, VGS = 12V A ISD 26A, di/dt 190A/s, VDD 200V, TJ 150C 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. 160 volt V DS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-254AA Tabless
NOT ES : 1. 2. 3. 4. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. CONT ROLLING DIMENS ION: INCH. T HIS OUT LINE IS A MODIFIED T O-254AA JEDEC OUT LINE.
PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/2004
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